Junction field-effect transistor with a novel gate

Details Junction field-effect transistor with a novel gate Junction field-effect transistor with a novel gate

1989-12-21

1990-09-18

James, Andrew J.

357 2312, H01L 2980

Patent

active

049582046

ABSTRACT:
A junction field effect transistor (JFET) with a novel gate. The novel gate uses a gate region (19) induced by charged ions (13) located in the gate dielectric layer (12) above the channel region (1). The charged ions (13) that induce the gate region are implanted into the gate dielectric layer (12) and subsequently activated. Both N channel and P channel devices can be produced in this fashion. The invention, unlike conventional JFET's, may be forward biased, and is free of the noise produced by a conventional diffused gate region.

REFERENCES:
patent: 3442721 (1969-05-01), McCaldin et al.
patent: 3540925 (1970-11-01), Athanas et al.
patent: 3624466 (1971-11-01), Schnable
patent: 3852120 (1974-12-01), Johnson et al.
Sze, S. Physics of Semiconductor Devices, 1981, pp. 504-506.
Grove, A. S., Physics and Technology of Semi-Conductor Devices, Wiley, 1967, pp. 330-331.
W. Gartner and M. Schulz, "Electronic Conduction Mechanisms of Cs- and B-Implanted SiO.sub.2 -Films", Applied Physics, 12, pp. 137-148.

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