Semiconductor light-emitting device and method of manufacturing

Details Semiconductor light-emitting device and method of manufacturing Semiconductor light-emitting device and method of manufacturing

1989-07-20

1990-09-18

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 30, 357 56, 372 46, 437 23, 437127, H01L 3300, H01L 2714

Patent

active

049582020

ABSTRACT:
An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.

REFERENCES:
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 4692927 (1987-09-01), Sawai et al.
patent: 4706101 (1987-11-01), Nakamura et al.
patent: 4731790 (1988-03-01), Sawai
patent: 4862474 (1989-08-01), Morinaga et al.
patent: 4870468 (1989-09-01), Kinoshita et al.

Affiliated with

Also associated with

Rating

Semiconductor light-emitting device and method of manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting device and method of manufacturing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device and method of manufacturing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1574688