Resonant tunneling minority carrier transistor

Details Resonant tunneling minority carrier transistor Resonant tunneling minority carrier transistor

1987-06-05

1990-09-18

Larkins, William D.

357 4, 357 12, 357 34, H01L 29205, H01L 2972

Patent

active

049582011

ABSTRACT:
A semiconductor device has an emitter potential barrier, a collector potential barrier, a base between the emitter potential barrier and the collector potential barrier, an emitter in contact, through the emitter potential barrier, with the base, and a collector in contact, through the collector potential barrier, with the base. The base has a thin base width capable of generating discrete energy levels of monority carriers therein. Carriers which are minority carriers in the base can be transferred from the emitter via the discrete energy levels in the base to the collector by resonant tunneling at an ultra-high speed.

REFERENCES:
Chang et al., Appl. Phys. Lett., vol. 24, No. 12, Jun. 15, 1974, pp. 593-595.
Ricco et al., IBM Technical Disclosure Bulletin, vol. 27, No. 5, pp. 3053-3056 (Oct. 1984).
Milnes and Feuche, Heterojunctions and Metal-Semiconductor Junctions (Academic Press, N.Y., 1972), p. 9.

Affiliated with

Also associated with

Rating

Resonant tunneling minority carrier transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resonant tunneling minority carrier transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resonant tunneling minority carrier transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1574676