Process for the production of yellow glowing gallium phosphide d

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148172, 148173, 252 623GA, 156622, 156624, H01L 738

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active

039486931

ABSTRACT:
Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into the melt as dopants, a first layer is grown on the substrate from the melt, and then a zinc containing layer is deposited over the first layer, and the temperatures of the layers are controlled to cause diffusion of the zinc into the first layer to a predetermined depth.

REFERENCES:
patent: 3603833 (1971-09-01), Logan et al.
patent: 3669767 (1972-06-01), Hackett et al.
patent: 3689330 (1972-09-01), Dosen et al.
patent: 3703671 (1972-11-01), Saul
patent: 3723177 (1973-03-01), Toyama et al.
patent: 3783825 (1974-01-01), Kobayashi et al.

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