Method for manufacturing accurate structures with a high aspect

Details Method for manufacturing accurate structures with a high aspect Method for manufacturing accurate structures with a high aspect

1984-06-07

1986-05-06

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430323, 430324, 430967, 430966, 378 34, 378 35, 156655, 1566591, G03F 900

Patent

active

045871841

ABSTRACT:
A method for manufacturing structures having dimensions in a range of 1 .mu.m and below in a layer of material by applying an auxiliary layer consisting of metal or metal oxide on the layer to be structured and utilizing a lacquer mask to structure the auxiliary layer to form a mass therein for the etching of the layer to be structured, characterized by passivating the auxiliary layer by applying a protective layer to prevent oxidizing of the auxiliary layer until a desired time. The protective layer can be gold or platinum and the auxiliary layer can be selected from a group consisting of titanium, hafnium, zirconium, vanadium, chromium, manganese, aluminum, niobium and tantalum. The method is particularly useful to manufacuture absorber structures of X-ray masks that are used in microelectronics.

REFERENCES:
patent: 3855023 (1974-12-01), Spicer et al.
patent: 4152601 (1979-05-01), Kadota et al.
patent: 4342817 (1982-08-01), Bohlen et al.
patent: 4448865 (1984-05-01), Bohlen et al.
Horz et al., "The Role of Surface Phenomena in the Interactions of Reactive Metals with Gases", Vacuum, vol. 33, No. 5, 1983, pp. 265-270.
Cantagrel, "Considerations on High Resolution Patterns Engraved by Ion Etching", IEEE Transactions on Electronic Devices, vol. ED-22, No. 7, July 1975, pp. 483-486.

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