Process for forming passivation film on photoelectric conversion

Details Process for forming passivation film on photoelectric conversion Process for forming passivation film on photoelectric conversion

1985-04-24

1986-05-06

Pianalto, Bernard D.

Stock material or miscellaneous articles

Composite

Of silicon containing

427 39, 427 74, 428450, 428457, B32B 904

Patent

active

045871710

ABSTRACT:
In a process for forming a passivation film on the surface of a photoelectric conversion device having a junction between hydrogenated amorphous silicon and a conductive electrode, the passivation film is formed by the steps of forming a first passivation film of silicon oxide on the surface of the photoelectric conversion device and then forming a second passivation film of silicon nitride on the first passivation film. In this process, the first passivation film is formed under an atmosphere of a mixed gas prepared by mixing an excess of a gas containing oxygen with silane gas in accordance with the plasma CVD method.

REFERENCES:
patent: 3573096 (1971-03-01), Tombs
patent: 3990100 (1976-11-01), Mamine et al.
patent: 4091169 (1978-05-01), Bohg et al.
patent: 4344985 (1982-08-01), Goodman et al.
patent: 4379943 (1983-04-01), Yang et al.
patent: 4410558 (1983-10-01), Izu et al.

Affiliated with

Also associated with

Rating

Process for forming passivation film on photoelectric conversion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming passivation film on photoelectric conversion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming passivation film on photoelectric conversion will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1574302