Solid state image sensor

Facsimile and static presentation processing – Facsimile – Recording apparatus

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358909, H04N 315

Patent

active

045919178

ABSTRACT:
A solid state image sensor is constituted so as to transfer signal charges produced in response to optical irradiation to readout means (22) provided at the end in the direction of alignment of the transfer electrodes with charge transfer channels (30) located below a plurality of transfer electrode array (27) arranged on a semiconductor wafer (20) through an insulating film (32) and to output them from the readout means. The solid state image sensor is provided with means for controlling applied voltage comprising voltage sources (37, 38) of low and high voltages, multi-phase clock source (36) and switch means (34). The applied voltage control means, at a time period of optical irradiation, is operative to apply a voltage to form a deep potential well in transfer channels located below either odd number of transfer electrodes or even number thereof, and form a potential barrier in the transfer channels located below the other electrodes, thereby to store signal charges in the potential well. Further, this applied voltage control means, at a time period of signal readout in a light-interrupted condition, is operative to apply charge transfer multi-phase clocks from transfer electrodes closest to signal readout means sequentially towards those located apart therefrom.

REFERENCES:
patent: 4178614 (1979-12-01), Sauer
patent: 4336556 (1982-06-01), Sekine
patent: 4392158 (1983-07-01), Aoki
patent: 4420773 (1983-12-01), Toyoda
patent: 4426664 (1984-01-01), Nagumo
patent: 4443818 (1984-04-01), Ohba
patent: 4455575 (1984-06-01), Murakoshi
patent: 4463383 (1984-07-01), Soneda
patent: 4472741 (1984-09-01), Takatsu
patent: 4486783 (1984-12-01), Tanaka
patent: 4489351 (1984-12-01), d'Alayer
patent: 4500924 (1985-02-01), Ohta
patent: 4504866 (1985-03-01), Saito
patent: 4541010 (1985-09-01), Alston
Kovac et al., "Design, Fabrication, and Performance of A 128.times.160 Element Charge-Coupled Image Sensor" (1973) Especially FIGS. 1,2, & 3, and pp. 38 and 39 (Taken from Proc. of CCD Appl. Conf. (San Diego)).

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