Photoelectric conversion device utilizing fibrous silicon

Details Photoelectric conversion device utilizing fibrous silicon Photoelectric conversion device utilizing fibrous silicon

1983-05-24

1986-05-27

James, Andrew J.

357 58, 357 2, 357 59, H01L 2714

Patent

active

045918937

ABSTRACT:
A PIN type semiconductor photoelectric conversion device is provided with a non-single-crystal semiconductor laminate member which comprises a first non-single-crystal semiconductor layer of a first conductivity, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer of a second conductivity type, and first and second electrodes which make ohmic contact with the first and third non-single-crystal semiconductor layers, respectively. Either one or both of the first and third non-single-crystal semiconductor layers have a fibrous structure which has a smaller light absorption coefficient than do the non-single-crystal semiconductors of the amorphous and microcrystalline structures formed of the same semiconductor material. The non-single crystal semiconductor layer of the fibrous structure is formed by a chemical vapor reaction of a gas mixture of semiconductor material gas, recombination center neutralizer gas and impurity material gas in a reaction chamber in the same manner as has been employed in the manufacture of the conventional semiconductor photoelectric conversion devices. In this case, the substrate on which the non-single-crystal semiconductor layer is to be formed is disposed so that a stream of the gas mixture may be passed over the substrate, and chemical vapor reaction is carried out at a pressure of 0.001 to 10 Torr and 100.degree. to 400.degree. C. in the reaction chamber.

REFERENCES:
patent: 4196438 (1980-04-01), Carlson
patent: 4401840 (1983-08-01), Chitre
patent: 4433202 (1984-02-01), Maruyama et al.
"Amorphous Silicon Solar Cell", Carlson et al, Applied Physics Letters, vol. 28, No. 11, Jun. 1976, pp. 671-673.
"Passivation of Grain Boundaries in Polycrystalline Silicon", Seager et al, Appl. Phys. Lett., 34(5), Mar. 1, 1979, pp. 337-340.

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