Reduced mask manufacture of semiconductor memory devices

Details Reduced mask manufacture of semiconductor memory devices Reduced mask manufacture of semiconductor memory devices

1988-05-02

1990-09-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 27, 437 44, 437 47, 437 60, 437162, 437228, 437919, 437191, 357 236, H01L 2126

Patent

active

049578782

ABSTRACT:
A dynamic randon access memory (DRAM) is formed in a series of masking steps, during which a first layer of polysilicon is anisotropically etched. After the anisotropic etch, junctions are added to the polysilicon through doping techniques. A second layer of polysilicon is then deposited and is isotropically etched. By the sequence, critical dimensions are established at preliminary mask layers and subsequent layers do not require the high degree of criticality of dimension.

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Geipel et al; IBM Technical Disclosure Bulleltin vol. 20, No. 7, Dec. 1977, 2592-2593.

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