Masked electron beam lithography

Details Masked electron beam lithography Masked electron beam lithography

1987-05-15

1990-09-18

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430942, 2504923, G03F 100

Patent

active

049578359

ABSTRACT:
In an electron beam lithography system, a layer of photoresist is exposed in vacuum by a collimated flood beam of electrons passing through an electron mask in nominal contact with the photoresist to define the exposed images. The electron mask includes a mask wafer apertured to define one or more frames supporting one or more panes of electron permeable membrane material having an average atomic number less than 14 and each supporting a patterned layer of electron absorbing material defining the mask patterns. Suitable electron permeable membrane materials include BN, BC, SiC, Si.sub.3 N.sub.4 and Al.sub.4 C.sub.3 of a thickness of 0.1 .mu.m to 2 .mu.m.

REFERENCES:
patent: 3544790 (1970-12-01), Brown
patent: 3971860 (1976-07-01), Broers et al.
patent: 4061814 (1977-12-01), Pelitycki
patent: 4543266 (1985-09-01), Matsuo et al.
patent: 4862490 (1989-08-01), Karnezos et al.

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