Light-emitting diode

Details Light-emitting diode Light-emitting diode

1993-09-30

1995-04-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 96, 257 85, 257 97, 372 45, 372 50, H01L 29205, H01L 3300, H01S 319

Patent

active

054101590

ABSTRACT:
A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type, a lower cladding layer formed on the substrate end consisting of InGaAlP of the first conductivity type, a light-emitting layer formed on the lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and eight or more quantum well layers, and an upper cladding layer formed on the light-emitting layer and consisting of InGaAlP of a second conductivity type.

REFERENCES:
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5276698 (1994-01-01), Yoshida
patent: 5296717 (1994-03-01), Valster
Tech Diz. of 13th IEEE Int. Semiconductor Laset Conf. A-5, T. Tanaka, et al. pp. 106-161 Sep. 21, 1992, Optimization of Nqw Structure in 630 nm AlGaInP Laser for High-Temperature Operation.

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