Negative resistance device

Details Negative resistance device Negative resistance device

1981-04-14

1983-05-17

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 51, 357 57, 357 86, 307291, H01L 2702

Patent

active

043843000

ABSTRACT:
A negative resistance device utilizing a substrate bias effect is comprised of two MOS transistors of n-channel type and p-channel type. The two transistors are connected at the sources and the gates. The drain of the n-channel MOS transistor is connected to the substrate of the p-channel MOS transistor. The drain of the p-channel MOS transistor is connected to the substrate of the n-channel MOS transistor.

REFERENCES:
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patent: 4064525 (1977-12-01), Kano et al.
patent: 4231055 (1980-10-01), Iizuka
L. Hill et al., "Syn. of Electr. Bistable Ckts.," IEEE Trans. on Ckt. Theory, Mar. 1963, pp. 25-35.
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