Semiconductor device

Details Semiconductor device Semiconductor device

1995-05-30

1997-11-18

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257200, 257523, 257183, H01L 310328

Patent

active

056891245

ABSTRACT:
A semiconductor device comprises a silicon substrate, at least one compound semiconductor layer formed on the silicon substrate and including a GaAs semiconductor layer for serving as a source/drain regions of at least one field-effect transistor (FET), an insulating layer selectively formed on at least one compound semiconductor layer; and first, second and third electrodes each having a first portion, formed on the GaAs semiconductor layer, and serving as one of gate/source/drain electrodes, respectively, of at least one FET, at least one of the first, second and third electrodes having a second portion formed on the insulating layer.

REFERENCES:
patent: 4925810 (1990-05-01), Kano et al.
patent: 5272365 (1993-12-01), Nakagawa
patent: 5286985 (1994-02-01), Taddiken
patent: 5455183 (1995-10-01), Swirhun

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