Method for growing III-V group compound semiconductor crystal

Details Method for growing III-V group compound semiconductor crystal Method for growing III-V group compound semiconductor crystal

1995-05-26

1997-08-12

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 88, 117 89, 117 95, 117102, 438925, C30B 2302

Patent

active

056560761

ABSTRACT:
In a method for growing a III-V group compound semiconductor crystal, as a Si dopant, a compound including a Si atom bonded to an alkyl group and a hydrogen atom is used. Also, a compound including two Si atoms in one molecule thereof, at least one of said Si atoms being bonded to a hydrogen atom, and at least the other of said Si atoms being bonded to an alkyl group can be used. Further, a compound including two Si atoms in one molecule thereof, at least one of said Si atoms being bonded to a hydrogen atom, and at least the other of said Si atoms being bonded to a phenyl group or a compound including a Si atom bonded to an organic amino group can be used. Si can be doped evenly at a high concentration at a low temperature with a safe operation by the invention.

REFERENCES:
patent: 4904616 (1990-02-01), Bohling et al.
patent: 5124278 (1992-06-01), Bohling et al.
patent: 5445992 (1995-08-01), Tokunaga et al.

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