Method for making aluminum single crystal interconnections on in

Details Method for making aluminum single crystal interconnections on in Method for making aluminum single crystal interconnections on in

1993-03-22

1995-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437188, 437194, 437247, H01L 2144

Patent

active

054098629

ABSTRACT:
The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.

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