Method of manufacturing a metal contact on a word line

Details Method of manufacturing a metal contact on a word line Method of manufacturing a metal contact on a word line

1993-07-14

1995-04-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437193, 437200, H01L 2144, H01L 2148

Patent

active

054098602

ABSTRACT:
A metal contact is manufactured on a word line that is capable of isolating a metal from a semiconductor substrate by forming an active area having the injected impurity which is different from that of the semiconductor substrate formed on the semiconductor substrate of both sides of the word line.

REFERENCES:
patent: 5043781 (1991-08-01), Nishiura et al.
patent: 5059554 (1991-10-01), Spinner et al.
patent: 5213992 (1993-05-01), Lu
Wolf, Silicon Processing for VLSI GRA, vol. 2, Lattice press 1990 pp. 587-600, 428-434, 277-278.
Ghandhi VLSI Fabrication Principles, pp. 591-592.

Affiliated with

Also associated with

Rating

Method of manufacturing a metal contact on a word line does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a metal contact on a word line, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a metal contact on a word line will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1567337