Process of making a capacitor in a semiconductor memory device

Details Process of making a capacitor in a semiconductor memory device Process of making a capacitor in a semiconductor memory device

1993-10-06

1995-04-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

60919, H01L 2170, H01L 2700

Patent

active

054098564

ABSTRACT:
A process of making a capacitor in a semiconductor memory device provides photomasking processes which are reduced as all the stacked-disposable layers and the storage electrode node contact are patterned at the same time, and also an efficient area of the storage electrode node of a capacitor is maximized, and the process is simplified due to the formation of indented (fin-shaped) area by eliminating selectively the disposable layers which is stacked more than two time.
The present invention provides a simple and time-saving process of making a capacitor in a semiconductor memory cell device.

REFERENCES:
patent: 5170233 (1992-12-01), Liu
patent: 5240871 (1993-08-01), Doan et al.
"3-Dimensional Stacked Capacitor Cell For 16M and 64M Drams", T. Ema et al., IEDM, 88:592-595 (1988).

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