Method of fabricating a semiconductor device including heterojun

Details Method of fabricating a semiconductor device including heterojun Method of fabricating a semiconductor device including heterojun

1993-12-30

1995-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437133, 437919, H01L 21265

Patent

active

054098467

ABSTRACT:
A semiconductor device or an integrated circuit includes a heterojunction bipolar transistor. The transistor includes an emitter region, a base region, and a transistor electrode. The emitter region is made of first material having a first forbidden band gap. The base region is made of second material having a second forbidden band gap. The first forbidden band gap is wider than the second forbidden band gap. The transistor electrode is made of third material. A capacitor includes a plurality of capacitor electrodes which contain a capacitor electrode made of the third material. The transistor and the capacitor are electrically connected.

REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 5177574 (1993-01-01), Yoneda
Film Semiconductor Storage System, W. J. Taren IBM Technical Disclosure Bulletin, vol. 13 No. 1 (Jun. 1970).

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