Process for fabricating masks for use in X-ray lithography

Details Process for fabricating masks for use in X-ray lithography Process for fabricating masks for use in X-ray lithography

1994-02-25

1995-04-25

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430323, 378 34, 378 35, 156655, 156662, G03F 900

Patent

active

054097908

ABSTRACT:
A process for fabricating a mask for use in X-ray lithography which comprises dry etching, with high selectivity, an X-ray absorbing metal layer on an X-ray transmitting film. The process comprises etching a tungsten film (an X-ray absorbing metal layer) formed on an SiN film (an X-ray transmitting film) using S.sub.2 F.sub.2 gas. Since sulfur dissociates from S.sub.2 F.sub.2 and deposits on the side wall of the pattern while the tungsten film is removed by forming a WF.sub.x compound, sulfur atoms in the plasma combine with the dangling bonds of the nitrogen atoms in the underlying SiN film which appear upon exposure to form a sulfur nitride based deposition layer comprising polythiazyl (SN).sub.x as the principal constituent. Because the sulfur nitride based deposition layer protects the surface, etching with high base selectivity can be realized.

REFERENCES:
patent: 5312518 (1994-05-01), Kadomura
patent: 5314576 (1994-05-01), Kadomura

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