Solid state image sensor

Details Solid state image sensor Solid state image sensor

1980-12-12

1983-04-26

Edlow, M.

357 23, 357 16, 357 31, H01L 2714

Patent

active

043815170

ABSTRACT:
A MOSFET consisting of a source region, a drain region and a gate layer is formed on a p-type semiconductor substrate. Field insulation layers are formed to surround the MOSFET, and conductive electrodes are formed thereover. A photosensing layer is overlayed on this structure. This photosensing layer is made of an amorphous chalcogen glass semiconductor material, for example Se-As-Te, and is in contact with the source region through an opening. A charge packet generated within the photosensing layer is transferred to the source region by an electric field induced when a voltage is applied to the conductive electrodes.

REFERENCES:
patent: 4323912 (1982-04-01), Koike et al.
Yasuaki Terui et al., ISSCC 80, Digest Paper WAM2.6, pp. 34-35, 1980.

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