Semiconductor device and bonding pad structure therefor

Details Semiconductor device and bonding pad structure therefor Semiconductor device and bonding pad structure therefor

1995-06-07

1998-04-07

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

257698, H01L 2348, H01L 2352, H01L 2340

Patent

active

057367914

ABSTRACT:
In a semiconductor device having a bonding pad structure of a multilayered wiring structure comprising a first wiring layer and a second wiring layers which is located over the first wiring layer and an interlayer insulation layer between the wiring layers which has an electrically conductive component so as to electrically connect the wiring layers, the bonding pad structure is such that no crack is formed in the interlayer insulation layer during wire bonding.
The bonding pad structure is so arranged that an area of the first wiring layer area is smaller than that of the second wiring layer or the first wiring layer is formed outside a bonding region of the second wiring layer under the second wiring layer.

REFERENCES:
patent: 5149674 (1992-09-01), Freeman, Jr. et al.
patent: 5248903 (1993-09-01), Heim
patent: 5291062 (1994-03-01), Higgins, III
patent: 5367435 (1994-11-01), Andros et al.
patent: 5475236 (1995-12-01), Yoshizaki

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