Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1995-08-01
1997-11-18
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
H01L 218242
Patent
active
056887264
ABSTRACT:
A method for fabricating capacitors of a semiconductor device having a cylindrical storage electrode structure provided at its each side wall with a vertical groove for increasing the surface area of the storage electrode so that the semiconductor device has a sufficient capacitance. The method includes the steps of depositing a first conduction layer over a structure including a substrate and a contact hole, sequentially forming a first insulating film, a first conduction layer and a second insulating film, selectively growing the second insulating film, thereby forming a selectively-grown oxide film, sequentially etching the selectively-grown oxide film, the second insulating film and a predetermined portion of the first conduction layer, thereby forming a selectively-grown oxide film pattern, forming second-conduction layer spacers, third-conduction layer spacers and a first-conduction layer pattern, and removing the selectively-grown oxide film pattern, the first insulating film and the second insulating film pattern, whereby a cylindrical storage electrode with an increased surface area is formed.
REFERENCES:
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5443993 (1995-08-01), Park et al.
patent: 5491103 (1996-02-01), Ahn et al.
Chaudhari Chandra
Hyundai Electronics Industries Co,. Ltd.
Nath Gary M.
Thomas Toniae M.
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