Method of manufacturing a gate structure for a metal semiconduct

Details Method of manufacturing a gate structure for a metal semiconduct Method of manufacturing a gate structure for a metal semiconduct

1995-09-05

1997-11-18

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 39, 437176, 437912, 148DIG105, 148DIG140, H01L 21338

Patent

active

056887035

ABSTRACT:
A method of manufacturing a gate structure (19) for a semiconductor device (10) utilizes a dielectric layer (17) containing aluminum to protect the surface of a substrate (11) from residues resulting from deposition and etching of the gate structure (19). The gate structure (19) forms a refractory contact to the substrate (11), and the source and drain regions (26) are self-aligned to the gate structure (19). Semiconductor devices manufactured using methods in accordance with the present invention are observed to have a higher breakdown voltage and a higher transconductance, among other improved electrical performance characteristics.

REFERENCES:
patent: 4612560 (1986-09-01), Dortu et al.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 4863879 (1989-09-01), Kwok
patent: 5447874 (1995-09-01), Grivna et al.
patent: 5484740 (1996-01-01), Cho
patent: 5496748 (1996-03-01), Hattori et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a gate structure for a metal semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a gate structure for a metal semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a gate structure for a metal semiconduct will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1565014