Process of making a semiconductor device using a silicon-on-insu

Details Process of making a semiconductor device using a silicon-on-insu Process of making a semiconductor device using a silicon-on-insu

1994-01-24

1997-11-18

Fourson, George

Fishing, trapping, and vermin destroying

437 62, 437 63, 437 64, 437 67, H01L 2176

Patent

active

056887027

ABSTRACT:
A dielectric isolation substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semiconductor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer, and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectric isolation substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.

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