Semiconductor nonvolatile memory device

Details Semiconductor nonvolatile memory device Semiconductor nonvolatile memory device

1996-01-16

1997-07-22

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518524, 36518526, 3651853, 36518533, G11C 1134

Patent

active

056509626

ABSTRACT:
A semiconductor nonvolatile memory device which is able to be repeatedly rewritten a certain number of times by electrically erasing its memory cells, the semiconductor nonvolatile memory device being comprised of a detecting circuit for detecting if there are any memory cells which had been over-erased (mal-erased) at each rewrite operation, a write circuit for writing, into any cell where over-erasure had been detected, data of a normal or inverted level based on the data which should be written in the over-erased cells, and a recorder for recording if the write circuit wrote the data the same or inverted in level.

REFERENCES:
patent: 5444664 (1995-08-01), Kuroda et al.

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