Photoconductive member for exhibiting photoconductivity upon ill

Details Photoconductive member for exhibiting photoconductivity upon ill Photoconductive member for exhibiting photoconductivity upon ill

1985-11-22

1987-05-19

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 64, 430 95, G03G 5082

Patent

active

046668039

ABSTRACT:
A blocking layer is formed of amorphous silicon carbide (a-Si:C) or amorphous silicon nitride (a-Si:N) on a conductive substrate. A first photoconductive layer formed of a-Si:C or a-Si:N on the blocking layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element in the Periodic Table. A second photoconductive layer formed of on the first photoconductive layer contains 1.times.10.sup.-6 to 1.times.10.sup.-3 atomic % of a Group III or V element. The second photoconductive layer has a thickness of 0.1 to 45 .mu.m. With this multilayer structure, a photosensitive member having high charging and potential holding properties can be obtained.

REFERENCES:
patent: 4443529 (1984-04-01), Kanbe et al.
patent: 4510224 (1985-04-01), Yamazaki et al.
patent: 4539283 (1985-09-01), Shirai et al.
patent: 4557987 (1985-10-01), Shirai et al.

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