Method of fabricating a thin film transistor using a nickel sili

Details Method of fabricating a thin film transistor using a nickel sili Method of fabricating a thin film transistor using a nickel sili

1994-06-14

1996-01-30

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40, 437101, 437233, 437967, 437973, 148DIG1, 148DIG16, 148DIG154, 117 8, H01L 2100, H01L 21336

Patent

active

054880009

ABSTRACT:
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.

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Kawazu et al., "Low Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation", Jap. J. of Appl. Phys., vol. 29, No. 12, Dec. 1990, pp. 2698-2704.
Kawazu et al., "Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon", Jap. J. of Appl. Phys., vol. 29, No. 4, Apr. 1990, pp. 729-738.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages).
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

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