Method for production of semiconductor devices

Details Method for production of semiconductor devices Method for production of semiconductor devices

1981-03-03

1983-04-26

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 357 91, 427 531, H01L 21263, B05D 306

Patent

active

043812015

ABSTRACT:
Various improvements applicable to a method for production of a semiconductor device which is produced on a single crystalline semiconductor layer converted from a non-single crystalline semiconductor layer employing an energy ray irradiation process for conversion of non-single crystalline semiconductor to single crystalline semiconductor, including a process to make a scribing process more efficient realized by producing windows along scribe lines, a process for production of a planer type semiconductor device without damaging a converted single crystalline semiconductor layer realized by interposition of a field oxidation process and an energy ray irradiation process, a process enabling deep and uniform distribution of impurities without lateral diffusion in a semiconductor layer and a process for production of an embedded semiconductor resistor realized by employment of a mask made of a material not to allow radiated heat to pass therethrough, and a process for production of a mesa type semiconductor device not to allow discontinuity of wirings realized by employment of an energy ray irradiation process.

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patent: 4187126 (1980-02-01), Radd et al.
patent: 4229232 (1980-10-01), Kirkpatrick 148
patent: 4258078 (1981-03-01), Celler et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4292091 (1981-09-01), Togei
Anantha et al., IBM-TDB, 22 (1979) 575.
Cook et al., Appl. Phys. Letts., 26 (1975) 124.

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