Active-matrix device having silicide thin film resistor disposed

Details Active-matrix device having silicide thin film resistor disposed Active-matrix device having silicide thin film resistor disposed

1994-12-23

1997-07-22

Gross, Anita Pellman

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

349147, G02F 11343

Patent

active

056508344

ABSTRACT:
An active-matrix substrate including a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a shortcircuiting ring for shortcircuiting each of the signal lines at the periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 k.OMEGA. to 500 k.OMEGA. provided intermediate between an input terminal of each of the signal lines and the shortcircuiting ring.

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patent: 5498573 (1996-03-01), Whetten
patent: 5504348 (1996-04-01), Yoshida et al.
Murarka, "Properties & Applications Of Silicides", Rensselaer Polytechnic Institute Center for Intergrated Electronics, pp. 275-323.

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