Connector effecting an improved electrical connection and a semi

Details Connector effecting an improved electrical connection and a semi Connector effecting an improved electrical connection and a semi

1993-02-24

1997-07-22

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

349139, 257763, H01L 2348, H01L 2352, H01L 2940

Patent

active

056506643

ABSTRACT:
A semiconductor apparatus exhibiting excellent contact characteristics, high operational speed and low electric power consumption is realized by forming a layer made of Ti or a Ti compound between an oxide containing indium such as a thin ITO film and a Si region.

REFERENCES:
patent: 4646424 (1987-03-01), Parks et al.
patent: 5208690 (1993-05-01), Hayashi et al.
patent: 5285301 (1994-02-01), Shirahashi et al.
patent: 5367179 (1994-11-01), Mori et al.
patent: 5402254 (1995-03-01), Sasano et al.
Applied Physics Letters, vol. 42, No. 4, 15 Feb. 1983 at p. 388.
J. of the Electrochemical Soc., vol. 127, No. 2 Feb. 1980 at 476-83 "Formation Mechanism Of Porous Silicon Layer" by Takashi Unagami.
Solid State Electronics, vol. 24, 1981, at ppl 159-64 "A New Dielectric Isolation Method Using Porous Silicon" by Kazuo Imai.
J. Of The Electrothermal Soc. vol. 130, No. 7 Jul. 1983 at 1611-14 "Pore Size Distribution In Porous Silicon" by G. Bomchil, et al.
Bell System Tech. J., vol. 35, Mar., 1956 at 333 "Electrolytic Shaping Of Germanium & Silicon" by A. Uhlir, Jr.

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