Field effect semiconductor device

Details Field effect semiconductor device Field effect semiconductor device

1995-03-08

1997-07-22

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 29161

Patent

active

056506422

ABSTRACT:
A field effect semiconductor device comprises a first channel layer composed of an undoped semiconductor in which electrons mainly drift in low-noise operation and a second channel layer composed of a semiconductor of one conductivity type in which electrons mainly drift in high-power operation, a third channel layer being provided in the second channel layer or on the second channel layer on the opposite side of the first channel layer. The third channel layer is constituted by at least one semiconductor layer of the one conductivity type or undoped having a greater electron affinity than that of the second channel layer and having a smaller forbidden bandgap than that of the second channel layer. In another field effect semiconductor device, an undoped impurity diffusion preventing layer having an electron affinity approximately equal to that of the second channel layer is provided between the first channel layer and the second channel layer.

REFERENCES:
patent: Re33584 (1991-05-01), Mimura
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4558337 (1985-12-01), Saunier et al.
Technical Report of IEICE. ED 93-175, MW 93-132, ICD 93-190 (1994-01), 21 Jan. 1994.
IEEE Electron Device Letters, vol. 14, No. 7, Jul. 1993.
Int. Electron Devices Meeting Tech. Dig. (IEEE, New York, 1986) pp. 759-762, 7 Dec. 1986.

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