Semiconductor device with PZT/PLZT film and lead-containing elec

Details Semiconductor device with PZT/PLZT film and lead-containing elec Semiconductor device with PZT/PLZT film and lead-containing elec

1992-05-29

1994-03-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257310, H01L 29400, H01L 27108

Patent

active

052930750

ABSTRACT:
A semiconductor device comprising an oxide film, an electrode and a PZT or PLZT film formed in this order on a substrate, the electrode being a deposit of platinum containing lead.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5099305 (1992-03-01), Takenaka
Spierings et al., Preparation and Ferroelectric Properties of PbZr.sub.0.53 Ti.sub.0.47 O.sub.3 thin films by Spin Coating and Metalorganic Decomposition, J. Appl. Phys., vol. 70, No. 4, Aug. 15, 1991, pp. 2290-2298.

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