Bump structure for bonding to a semi-conductor device

Details Bump structure for bonding to a semi-conductor device Bump structure for bonding to a semi-conductor device

1992-02-18

1994-03-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

257751, H01L 29440, H01L 29460

Patent

active

052930718

ABSTRACT:
A bump structure for bonding leads to a semi-conductor, in which the bump has a thin lower portion which overlaps and seals the edges of the passivation layer, and a thicker upper or stem portion of smaller lateral dimensions to fit within the margins of the opening in the passivation layer. Thus, during bonding, downward compressive forces are applied primarily through the bump stem directly to the metal termination pad beneath the bump, and very little force is applied to the edges of the passivation layer. This reduces the likelihood of passivation layer cracking, increasing device reliability. Because the bump stem is formed within the margins of the passivation layer opening, it has a flat top, resulting in better lead bonding.

REFERENCES:
patent: 3689991 (1972-09-01), Aird
patent: 4263606 (1981-04-01), Yorikane
Failure Mechanisms in Tab Inner Lead Bonding and the Relationship Between Design and Reliability, James D. Hayward, (1991) IEEE/CHMT 91 Symposium, pp. 6-9.
Quality and Reliability of Tab Inner Lead Bond, P. Hedemalm, (1991), ITAB 90 Proceedings, pp. 87-102.

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