Method for reducing corrosion in openings on a semiconductor waf

Details Method for reducing corrosion in openings on a semiconductor waf Method for reducing corrosion in openings on a semiconductor waf

1996-03-11

1997-07-22

Utech, Benjamin

Fishing, trapping, and vermin destroying

437197, 437198, 1566561, H01L 2144

Patent

active

056503563

ABSTRACT:
A method is provided for reducing corrosion in openings on a semiconductor wafer. An etched opening is provided in a dielectric material on the semiconductor wafer. The etched opening and the dielectric material are cleaned with a basic solution. The exposed metal surface is treated with a hydrogen peroxide solution before exposing the exposed metal surface to an aqueous solution.

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Stanley Wolf et al., "Silicon Processing for the VLSI Era", vol. 1:Process Technology, Lattice Press, Sunset Beach, CA.

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