Static type semiconductor device operable at a low voltage with

Details Static type semiconductor device operable at a low voltage with Static type semiconductor device operable at a low voltage with

1995-08-18

1997-10-14

Popek, Joseph A.

Static information storage and retrieval

Powering

36518909, G11C 700

Patent

active

056778899

ABSTRACT:
An SRAM includes a memory cell array, a peripheral circuitry including a bit line load connected to the memory cell array, a multiplexer and the like, and a voltage lowering circuit. The voltage lowering circuit receives a power supply potential Vcc and outputs a potential Vin which is lower. The potential Vin is applied to the peripheral circuitry except the memory cell array, and the power supply potential Vcc is directly applied to the memory cell array. Therefore, operational potential of the memory cell array is made relatively higher with respect to the peripheral circuitry. As a result, a static semiconductor memory device which can operation at low voltage and consumes less power can be provided.

REFERENCES:
patent: 4638465 (1987-01-01), Rosini et al.
patent: 5046052 (1991-09-01), Miyaji et al.
patent: 5327388 (1994-07-01), Kobayashi
patent: 5341340 (1994-08-01), Hagura
patent: 5363333 (1994-11-01), Tsujimoto
patent: 5373477 (1994-12-01), Sugibayashi

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