Process for enhancing refresh in dynamic random access memory de

Details Process for enhancing refresh in dynamic random access memory de Process for enhancing refresh in dynamic random access memory de

1995-03-07

1997-07-22

Tsai, Jey

Fishing, trapping, and vermin destroying

437 40AS, 437 47, 437 60, 437919, H01L 2170, H01L 2700

Patent

active

056503490

ABSTRACT:
A process for enhancing refresh in Dynamic Random Access Memories wherein n-type impurities are implanted into the capacitor buried contact after formation of the access transistor components. The process comprises forming a gate insulating layer on a substrate and a transistor gate electrode on the gate insulating layer. First and second transistor source/drain regions are formed on the substrate adjacent to opposite sides of the gate electrodes. N-type impurities, preferably phosphorous atoms, are then implanted into the first source/drain region which will serve as the capacitor buried contact.

REFERENCES:
patent: 4512073 (1985-04-01), Hsu
patent: 4709467 (1987-12-01), Liu
patent: 5126916 (1992-06-01), Tseng
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5219770 (1993-06-01), Shirato et al.
patent: 5227325 (1993-07-01), Gonzalez et al.
patent: 5234856 (1993-08-01), Gonzalez et al.
patent: 5240872 (1993-08-01), Motonami et al.
patent: 5244826 (1993-09-01), Gonzalez et al.
patent: 5250832 (1993-10-01), Murai
patent: 5320974 (1994-06-01), Hori et al.
patent: 5376566 (1994-12-01), Gonzalez et al.
patent: 5547885 (1996-08-01), Ogoh
Hurkx et al., A New Recombination Model For Device Simulation Including Tunneling, IEEE TRED vol. 39, No. 2, Feb. 1992.
Hurkx, Anomalous Behavior of Surface Leakage Currents in Heavily Doped Gated Diodes, IEEE TRED vol. 40, No. 12, Dec. 1993.

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