Method of forming MOSFET devices with buried bitline capacitors

Details Method of forming MOSFET devices with buried bitline capacitors Method of forming MOSFET devices with buried bitline capacitors

1995-11-14

1997-07-22

Niebling, John

Fishing, trapping, and vermin destroying

437 52, 257316, H01L 218247

Patent

active

056503466

ABSTRACT:
A MOSFET device with a substrate covered with dielectric material with the device including a plurality of buried conductors capacitively coupled to a polysilicon electrode, made by:

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Shibata et al, "Functional MOS Transistor Featuring Gate-Level Weighed Sum and Threshold Operations", IEEE Transactions on Electron Devices, vol. 39, No. 6, pp. 1444-1455 (Jun., 1992).

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