Method of making non-uniformly nitrided gate oxide

Details Method of making non-uniformly nitrided gate oxide Method of making non-uniformly nitrided gate oxide

1995-07-17

1997-07-22

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 42, 437239, 437244, 437242, 437978, 148DIG43, 148DIG44, 148DIG112, 148DIG114, H01L 21318

Patent

active

056503440

ABSTRACT:
A method of making a semiconductor device in which a polysilicon gate is separated from a semiconductor substrate by a re-oxidized nitrided oxide film and in which the concentration of re-oxidized nitride in the film underlying the gate is non-uniform. The concentration of nitrogen in the substrate and the re-oxidized nitrided oxide along their interface and underlying the gate is non-uniform. The non-uniform concentrations are provided by incomplete shielding of the oxide by the gate during the nitriding and re-oxidizing processes.

REFERENCES:
patent: 4528211 (1985-07-01), Bhagat
patent: 5324675 (1994-06-01), Hayabuchi
patent: 5382533 (1995-01-01), Ahmad et al.
A. B. Joshi et al., IEEE Trans. Electron Dev., 39(4)(1992)883, ". . . Rapid Thermal Reoxidation . . . of Rapid Thermally Nitrided Thin-Gate Oxides" Apr. 1992.

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