Method of manufacturing thin film transistor

Details Method of manufacturing thin film transistor Method of manufacturing thin film transistor

1995-12-07

1997-07-22

Niebling, John

Fishing, trapping, and vermin destroying

437 24, 437 41, 437 62, H01L 2184, H01L 21265

Patent

active

056503393

ABSTRACT:
A semiconductor device includes an underlying layer formed by a first insulation layer, a plurality of island semiconductor layers formed on the first insulation layer, source and drain regions formed in each of the island semiconductor layers, a first gate electrode formed between the source and drain regions and formed on and insulated from the island semiconductor layer, a second insulation layer formed on the sides of the island semiconductor layer and along the periphery of the first gate electrode, the second insulation layer being higher than the surface of the island semiconductor layer and lower than the surface of the first gate electrode, and a second gate electrode formed over both the first gate electrode and the second insulation layer.

REFERENCES:
patent: 4523963 (1985-06-01), Ohta et al.
patent: 5188973 (1993-02-01), Omura et al.
patent: 5482877 (1996-01-01), Rhee
patent: 5494837 (1996-02-01), Subramanian et al.
patent: 5518949 (1996-05-01), Chen
K. Shibahara, et al., "Trench Isolation with .DELTA. (NABLA)-Shaped Buried Oxide for 256Mega-Bit Drams", IEDM Technical Digest, 1992, pp. 275-278, month unknown.

Affiliated with

Also associated with

Rating

Method of manufacturing thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1559619