Semiconductor layer structure having an aluminum-silicon alloy l

Details Semiconductor layer structure having an aluminum-silicon alloy l Semiconductor layer structure having an aluminum-silicon alloy l

1988-08-22

1991-01-22

Hille, Rolf

357 71, H01L 2348, H01L 2946, H01L 2952, H01L 2960

Patent

active

049875620

ABSTRACT:
A semiconductor layer structure includes an alloy layer of aluminum and silicon formed on a silicon substrate. The concentration of silicon contained in the aluminum-silicon alloy layer is within a range of 10 to 75 weight percent. A barrier layer is formed on top of the aluminum-silicon alloy layer, and a metallic layer is formed on top of the barrier layer.

REFERENCES:
Patent Abstracts of Japan, vol. 9, No. 136 (E-320) (1859) Jun. 12, 1985; & JP-A-60-20568 (Hitachi) 01-02-1985.
Patent Abstracts of Japan, vol. 8, No. 247 (E278) (1684), Nov. 13, 1984; & JP-A-59-124765 (Fujitsu) 18-07-1948.

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