Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1995-02-24

1998-04-07

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257751, 257756, 257757, 257915, H01L 2900

Patent

active

057367760

ABSTRACT:
On a p.sup.+ diffused region which is to be a lower electrode of a capacitor, a silicon nitride film which is a capacitor insulating layer is formed. An upper electrode is formed on this silicon nitride film. The upper electrode has a non-doped polycrystalline silicon film and a silicide layer. Non-doped polycrystalline silicon film is formed in contact with silicon nitride film. Silicide layer is formed on a surface of non-doped polycrystalline silicon film. Thus, a capacitor structure is obtained in which a larger capacitance and a higher breakdown voltage can be assured, so that it would not operate inaccurately even when it is integrated to a higher degree.

REFERENCES:
patent: 3387286 (1968-06-01), Denmaid
patent: 4329706 (1982-05-01), Crowder et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4897702 (1990-01-01), Sunouchi
patent: 4931845 (1990-06-01), Ema
patent: 5187122 (1993-02-01), Bonis

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