Lateral high-voltage transistor suitable for use in emitter foll

Details Lateral high-voltage transistor suitable for use in emitter foll Lateral high-voltage transistor suitable for use in emitter foll

1988-10-25

1991-01-22

Wojciechowicz, Edward J.

357 43, 357 48, 357 53, H01L 2972

Patent

active

049874691

ABSTRACT:
A semiconductor device includes a substrate of a first conductivity type, a semiconductor layer of the second opposite conductivity type disposed thereon and a lateral high-voltage transistor provided therein and located above a buried layer of the second conductivity type. Between the base zone and the surface-adjoining collector contact zone is situated a FET having an gate electrode separated from the semiconductor layer by a barrier layer. The gate electrode is electrically connected to the emitter. As a result, with the use of the transistor in emitter follower arrangement in the situation in which the emitter is substantially at collector potential, the emitter-collector current is not pinched off.

REFERENCES:
patent: 4489341 (1984-12-01), Mayrand
patent: 4807009 (1989-02-01), Fushimi et al.

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