Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-01-11
1998-04-07
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257398, 257399, 257400, H01L 2976, H01L 2994
Patent
active
057367752
ABSTRACT:
A semiconductor device includes a field insulating film, a channel stopper, and a diffusion layer. The field insulating film is formed on one major surface of a semiconductor substrate of a first conductivity type to surround an element region. The channel stopper of the first conductivity type is formed immediately below the field insulating film. The diffusion layer of an opposite conductivity type is formed to be adjacent to the channel stopper. The impurity concentration peak position of the diffusion layer substantially coincides with that of the channel stopper.
REFERENCES:
patent: 5206535 (1993-04-01), Namsoe
patent: 5348910 (1994-09-01), Namsoe
patent: 5428239 (1995-06-01), Okumura et al.
patent: 5478759 (1995-12-01), Mametani et al.
patent: 5508541 (1996-04-01), Hieda et al.
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5594264 (1997-01-01), Shirahata et al.
NEC Corporation
Whitehead Carl W.
LandOfFree
Semiconductor device having a concentration peak position coinci does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a concentration peak position coinci, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a concentration peak position coinci will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-15578