Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-08-21
1997-10-14
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257499, 257620, 257622, H01L 2900
Patent
active
056775644
ABSTRACT:
The invention concerns fabrication of oxide-filled isolation trenches in integrated circuits. The invention etches a network of trenches in the surface of a uniformly doped wafer which has experienced no substantial processing steps. Such a wafer will have little, if any, surface damage. Such a wafer will etch to the same depth everywhere, because two major factors which affect etching rate are (a) surface damage and (b) doping non-uniformity, and these factors are absent. The trenches are then filled with oxide. They define islands upon which devices (such as transistors) may now be fabricated.
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Chiacchia Christine H.
Kelleher Patrick J.
McCormack Stephen R.
AT&T Global Information Solutions Company
Bailey Wayne P.
Carroll J.
Hyundai Electronics America
Symbios Logic Inc.
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