Semiconductor device strucutre having a two-dimensional electron

Details Semiconductor device strucutre having a two-dimensional electron Semiconductor device strucutre having a two-dimensional electron

1994-12-19

1997-10-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

056775539

ABSTRACT:
A semiconductor device includes a very low dopant impurity concentration InGaAs active layer in which a two-dimensional electron gas is produced, the active layer being disposed on a semiconductor substrate; a very low dopant impurity concentration spacer layer contacting the active layer at a first surface and having an electron affinity smaller than the electron affinity of the active layer; and a very thin InGaAs electron supply layer having a high n type dopant impurity concentration and contacting the spacer layer opposite the active layer. Degradation of device characteristics due to heating of the device is reduced with a result that a thermally stable and highly reliable semiconductor device is easily realized.

REFERENCES:
patent: 4961194 (1990-10-01), Kiroda et al.
patent: 5285087 (1994-02-01), Nanita et al.
patent: 5313093 (1994-05-01), Nakagawa
patent: 5321278 (1994-06-01), Nakagawa
patent: 5343057 (1994-08-01), Gerard et al.
patent: 5422307 (1995-06-01), Ishii
patent: 5446296 (1995-08-01), Nakajima

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