Electron-detector diode biassing scheme for improved writing by

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250397, H01J 3730

Patent

active

049873113

ABSTRACT:
Disclosed is a biassing scheme for a beam position location apparatus (50) which comprises electron detector diodes (52) in an electron beam lithography machine (10) such that the detector diodes (52) deposit fewer secondary electrons (62) on a substrate (16) being processed by the electron beam (22) and thus reduce or eliminate any charge buildup on said substrate which deflect the electron beam (22) causing pattern distortion.

REFERENCES:
patent: 4680468 (1987-07-01), Bouchard et al.

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