Method of making a semiconductor transducer having multiple leve

Details Method of making a semiconductor transducer having multiple leve Method of making a semiconductor transducer having multiple leve

1985-04-22

1987-05-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

148DIG159, 357 26, 29576C, 29576E, 156644, 73777, H01G 700

Patent

active

046656103

ABSTRACT:
A semiconductor pressure transducer includes a silicon substrate, a recessed portion in a major surface of the substrate, and a multiple level diaphragm overlying the recessed portion. A selectively etchable spacer material is employed when fabricating the diaphragm by forming successive layers of diaphragm material over the spacer material. Holes through the diaphragm are filled with the selectively etchable material thereby allowing the etching of the spacer material. Support posts can be provided in the recessed portion to help support the diaphragm.

REFERENCES:
patent: 4332000 (1982-05-01), Petersen
patent: 4588472 (1986-05-01), Shimizu
Barth, P. W., "Silicon Sensors Meet Integrated Circuits", IEEE Spectrum, vol. 18, No. 9, Sep. 1981, pp. 33-39.

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