Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

1995-05-26

1997-10-14

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 3, 437 40, 437 51, 437181, 437192, 437200, H01L 2144

Patent

active

056772408

ABSTRACT:
According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.

REFERENCES:
patent: 4968638 (1990-11-01), Wright et al.
patent: 5165075 (1992-11-01), Hisoki et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5264077 (1993-11-01), Fukada et al.
patent: 5414278 (1995-05-01), Kobayashi et al.
patent: 5468987 (1995-11-01), Yamazaki et al.

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