Fishing – trapping – and vermin destroying
Patent
1996-06-03
1997-10-14
Fourson, George
Fishing, trapping, and vermin destroying
437195, 437924, 437245, 148DIG20, H01L 2176, H01L 2128
Patent
active
056772319
ABSTRACT:
A trench isolation region (32) is fabricated to include a trench liner (28) comprised of aluminum nitride. The aluminum nitride trench liner is useful in borderless contact applications wherein a contact opening (56) is etched in an interlayer dielectric (54) and overlies both an active region. (e.g. doped region 52) and the trench isolation region. During formation of opening using etch chemistry which is selective to aluminum nitride, the trench liner protects a P-N junction at a corner region (58) of the trench to prevent exposing the junction. By protecting the junction, subsequent formation of a conductive plug (60) will not electrically short circuit the junction, and will keep diode leakage to within acceptable levels.
REFERENCES:
patent: 4274891 (1981-06-01), Silvestri et al.
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4656497 (1987-04-01), Rogers et al.
patent: 5268330 (1993-12-01), Givens et al.
patent: 5384281 (1995-01-01), Kenney et al.
patent: 5441094 (1995-08-01), Pasch
patent: 5447884 (1995-09-01), Fahey et al.
R.K. Sadhir, et al.; "Preparation of Aluminum Nitirde Thin Films for Use in Microelectronics;" IEEE; Ch. 2452-1, pp. 17-21 (1987).
R.G. Gordon, et al.; "Chemical vapor deposition of aluminum nitirde thin films;" J. Mater. Res., vol. 7, No. 7, pp. 1679-1684 (1992).
S.J. Pearton, et al.; "Dry and wet etching characteristics of InN, AIN and GaN deposited by electron cyclotron . . . ;" J. Vac. Sci. Technol. A, vol. 11, No. 4, pp. 1772-1775 (1993).
P.B. Legrand, et al.; "Optical properties of sputter-deposited aluminium nitride films on silicon;" SSDI, pp. 220-223, (1994).
J. Givens, et al.; "Selective dry etching in a high density plasma for 0.5 .mu.m complementary metaloxide-semiconductor tech.;" J. Vac. Sci. Technol. B, vol. 12, No. 1, pp. 427-432 (Jan./Feb. 1994).
C. Yu, et al.; "Deposition, Characterization, and Application of Aluminum Nitride Thin Films for Microelectronics;" Mat. Res. Soc. Symp. Proc., vol. 264, pp. 401-405 (1992).
S. Bhat, et al.; "Reactive Ion Beam Deposition of Aluminum Nitride Thin Films;" Journal fo Elect. Materials, vol. 14, No. 4, pp. 405-418 (1985).
Fiordalice Robert W.
Maniar Papu D.
Fourson George
Goddard Patricia S.
Motorola Inc.
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