Method of making integrated circuits

Details Method of making integrated circuits Method of making integrated circuits

1995-07-17

1997-10-14

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 52, 437DIG919, 257295, H01L 2170, H01L 2700

Patent

active

056772262

ABSTRACT:
The invention provides an integrated circuit including a capacitor provided with a silicon nitride film formed on a lower electrode of a polycrystalline silicon film by a rapid thermal nitridation method, a BaTiO.sub.3 film formed on the silicon nitride film and an upper electrode. The above capacitor structure can prevent the formation of a silicon oxide layer at the interface between the polycrystalline silicon film and the BaTiO.sub.3, and thus has high capacitance.

REFERENCES:
patent: 4990463 (1991-02-01), Mori
patent: 5397748 (1995-03-01), Watanabe et al.
patent: 5514904 (1996-05-01), Onga et al.
patent: 5524092 (1996-06-01), Park
patent: 5530279 (1996-06-01), Yamamichi et al.
patent: 5543644 (1996-08-01), Abt et al.
patent: 5583068 (1996-12-01), Jones, Jr. et al.

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